IRG4PF50WDPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1998 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Additional Feature | LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 900V |
| Max Power Dissipation | 200W |
| Terminal Position | SINGLE |
| Current Rating | 51A |
| Number of Elements | 1 |
| Element Configuration | Dual |
| Power Dissipation | 200W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 71 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 52ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 150 ns |
| Collector Emitter Voltage (VCEO) | 2.7V |
| Max Collector Current | 51A |
| Reverse Recovery Time | 90 ns |
| JEDEC-95 Code | TO-247AC |
| Collector Emitter Breakdown Voltage | 900V |
| Collector Emitter Saturation Voltage | 2.25V |
| Turn On Time | 121 ns |
| Test Condition | 720V, 28A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 28A |
| Turn Off Time-Nom (toff) | 460 ns |
| Gate Charge | 160nC |
| Current - Collector Pulsed (Icm) | 204A |
| Td (on/off) @ 25°C | 71ns/150ns |
| Switching Energy | 2.63mJ (on), 1.34mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Height | 20.7mm |
| Length | 15.87mm |
| Width | 5.3086mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
