Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 38.000013g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2004 |
Part Status | Last Time Buy |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 200W |
Terminal Position | SINGLE |
Current Rating | 51A |
Number of Elements | 1 |
Element Configuration | Dual |
Power Dissipation | 200W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 29 ns |
Transistor Application | POWER CONTROL |
Rise Time | 26ns |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 110 ns |
Collector Emitter Voltage (VCEO) | 2.7V |
Max Collector Current | 51A |
JEDEC-95 Code | TO-247AC |
Collector Emitter Breakdown Voltage | 900V |
Collector Emitter Saturation Voltage | 2.25V |
Turn On Time | 54 ns |
Test Condition | 720V, 28A, 5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 28A |
Turn Off Time-Nom (toff) | 370 ns |
Gate Charge | 160nC |
Current - Collector Pulsed (Icm) | 204A |
Td (on/off) @ 25°C | 29ns/110ns |
Switching Energy | 190μJ (on), 1.06mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
Fall Time-Max (tf) | 220ns |
Height | 20.3mm |
Length | 15.875mm |
Width | 5.3mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |