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IRG4PF50WPBF

IRG4PF50WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4PF50WPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 961
  • Description: IRG4PF50WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 200W
Terminal Position SINGLE
Current Rating 51A
Number of Elements 1
Element Configuration Dual
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 29 ns
Transistor Application POWER CONTROL
Rise Time 26ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 110 ns
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 51A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 900V
Collector Emitter Saturation Voltage 2.25V
Turn On Time 54 ns
Test Condition 720V, 28A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 28A
Turn Off Time-Nom (toff) 370 ns
Gate Charge 160nC
Current - Collector Pulsed (Icm) 204A
Td (on/off) @ 25°C 29ns/110ns
Switching Energy 190μJ (on), 1.06mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 220ns
Height 20.3mm
Length 15.875mm
Width 5.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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