Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 1998 |
Part Status | Last Time Buy |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 1.2kV |
Max Power Dissipation | 60W |
Current Rating | 11A |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 60W |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | MOTOR CONTROL |
Rise Time | 30ns |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 4.3V |
Max Collector Current | 11A |
Reverse Recovery Time | 51 ns |
JEDEC-95 Code | TO-247AC |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 3.17V |
Turn On Time | 80 ns |
Test Condition | 800V, 5A, 50 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 4.3V @ 15V, 5A |
Turn Off Time-Nom (toff) | 730 ns |
Gate Charge | 28nC |
Current - Collector Pulsed (Icm) | 22A |
Td (on/off) @ 25°C | 50ns/100ns |
Switching Energy | 620μJ (on), 300μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Height | 20.7mm |
Length | 15.87mm |
Width | 5.3086mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |