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IRG4PH30KDPBF

IRG4PH30KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4PH30KDPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 292
  • Description: IRG4PH30KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 100W
Current Rating 20A
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 39 ns
Transistor Application MOTOR CONTROL
Rise Time 79ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 220 ns
Collector Emitter Voltage (VCEO) 4.2V
Max Collector Current 20A
Reverse Recovery Time 50 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.1V
Turn On Time 121 ns
Test Condition 800V, 10A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4.2V @ 15V, 10A
Turn Off Time-Nom (toff) 637 ns
Gate Charge 53nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 39ns/220ns
Switching Energy 950μJ (on), 1.15mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 140ns
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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