IRG4PH40UD2-EP
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 38.000013g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2004 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 1.2kV |
| Max Power Dissipation | 160W |
| Current Rating | 41A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Input Type | Standard |
| Turn On Delay Time | 46 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 26ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 97 s |
| Collector Emitter Voltage (VCEO) | 3.1V |
| Max Collector Current | 41A |
| Reverse Recovery Time | 50 ns |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.43V |
| Turn On Time | 46 ns |
| Test Condition | 800V, 21A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 21A |
| Turn Off Time-Nom (toff) | 600 ns |
| Gate Charge | 100nC |
| Current - Collector Pulsed (Icm) | 82A |
| Td (on/off) @ 25°C | 22ns/100ns |
| Switching Energy | 1.95mJ (on), 1.71mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
