IRG4PH50S-EPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2000 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 200W |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Element Configuration | Dual |
| Power Dissipation | 200W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.7V |
| Max Collector Current | 57A |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 1.7V |
| Turn On Time | 62 ns |
| Test Condition | 960V, 33A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 33A |
| Turn Off Time-Nom (toff) | 2170 ns |
| Gate Charge | 167nC |
| Current - Collector Pulsed (Icm) | 114A |
| Td (on/off) @ 25°C | 32ns/845ns |
| Switching Energy | 1.8mJ (on), 19.6mJ (off) |
| Height | 20.7mm |
| Length | 15.87mm |
| Width | 5.3086mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
