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IRG4PH50SPBF

IRG4PH50SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4PH50SPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 560
  • Description: IRG4PH50SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Max Power Dissipation 200W
Current Rating 57A
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 32 ns
Transistor Application POWER CONTROL
Rise Time 29ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 845 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 57A
Continuous Drain Current (ID) 57A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 1.2kV
Gate to Source Voltage (Vgs) 30V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.75V
Input Capacitance 3.6nF
Turn On Time 62 ns
Test Condition 960V, 33A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 33A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 57A
Turn Off Time-Nom (toff) 2170 ns
Gate Charge 167nC
Current - Collector Pulsed (Icm) 114A
Td (on/off) @ 25°C 32ns/845ns
Switching Energy 1.8mJ (on), 19.6mJ (off)
Height 24.99mm
Length 15.875mm
Width 5.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Voltage - Rated DC 1.2kV
See Relate Datesheet

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