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IRG4PSH71KDPBF

IRG4PSH71KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4PSH71KDPBF
  • Package: TO-274AA
  • Datasheet: PDF
  • Stock: 904
  • Description: IRG4PSH71KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Power Dissipation 350W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 84ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.9V
Max Collector Current 78A
Reverse Recovery Time 107 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.97V
Turn On Time 152 ns
Test Condition 800V, 42A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 42A
Turn Off Time-Nom (toff) 660 ns
Gate Charge 410nC
Current - Collector Pulsed (Icm) 156A
Td (on/off) @ 25°C 67ns/230ns
Switching Energy 5.68mJ (on), 3.23mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 190ns
Height 20.8mm
Length 16.0782mm
Width 5.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-274AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1999
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 350W
Peak Reflow Temperature (Cel) 250
Current Rating 78A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
See Relate Datesheet

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