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IRG4PSH71UDPBF

IRG4PSH71UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG4PSH71UDPBF
  • Package: TO-274AA
  • Datasheet: PDF
  • Stock: 918
  • Description: IRG4PSH71UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-274AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA FAST SWITCHING
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 350W
Current Rating 99A
Number of Elements 1
Element Configuration Single
Power Dissipation 350W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 46 ns
Transistor Application POWER CONTROL
Rise Time 77ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 350 ns
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 99A
Reverse Recovery Time 110 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.52V
Turn On Time 121 ns
Test Condition 960V, 70A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 70A
Turn Off Time-Nom (toff) 810 ns
Gate Charge 380nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 46ns/250ns
Switching Energy 8.8mJ (on), 9.4mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 15.24mm
Length 10.5156mm
Width 4.699mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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