Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-274AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2004 |
Part Status | Last Time Buy |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | ULTRA FAST SWITCHING |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 1.2kV |
Max Power Dissipation | 350W |
Current Rating | 99A |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 350W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 46 ns |
Transistor Application | POWER CONTROL |
Rise Time | 77ns |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 350 ns |
Collector Emitter Voltage (VCEO) | 2.7V |
Max Collector Current | 99A |
Reverse Recovery Time | 110 ns |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 2.52V |
Turn On Time | 121 ns |
Test Condition | 960V, 70A, 5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 70A |
Turn Off Time-Nom (toff) | 810 ns |
Gate Charge | 380nC |
Current - Collector Pulsed (Icm) | 200A |
Td (on/off) @ 25°C | 46ns/250ns |
Switching Energy | 8.8mJ (on), 9.4mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
Height | 15.24mm |
Length | 10.5156mm |
Width | 4.699mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |