Parameters | |
---|---|
Gate Charge | 15nC |
Current - Collector Pulsed (Icm) | 18A |
Td (on/off) @ 25°C | 76ns/815ns |
Switching Energy | 310μJ (on), 3.28mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
Fall Time-Max (tf) | 1080ns |
Height | 1.2446mm |
Length | 6.7056mm |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2004 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Terminal Finish | MATTE TIN OVER NICKEL |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 38W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 14A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | IRG4RC10SDPBF |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 38W |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Rise Time | 31ns |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.8V |
Max Collector Current | 14A |
Reverse Recovery Time | 28 ns |
JEDEC-95 Code | TO-252AA |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 1.7V |
Turn On Time | 106 ns |
Test Condition | 480V, 8A, 100 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 8A |
Turn Off Time-Nom (toff) | 1780 ns |