Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2010 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | MATTE TIN OVER NICKEL |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 210W |
Peak Reflow Temperature (Cel) | 250 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | IRG7PH35 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 210W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.2V |
Max Collector Current | 55A |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 1.9V |
Turn On Time | 45 ns |
Test Condition | 600V, 20A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 20A |
Turn Off Time-Nom (toff) | 400 ns |
IGBT Type | Trench |
Gate Charge | 130nC |
Current - Collector Pulsed (Icm) | 60A |
Td (on/off) @ 25°C | 30ns/160ns |
Switching Energy | 1.06mJ (on), 620μJ (off) |
Gate-Emitter Thr Voltage-Max | 6V |
Fall Time-Max (tf) | 105ns |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |