Parameters | |
---|---|
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2010 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | SINGLE |
Reach Compliance Code | compliant |
Base Part Number | IRG7PH35 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 179W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
JEDEC-95 Code | TO-247AC |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 50A |
Power Dissipation-Max (Abs) | 179W |
Test Condition | 600V, 20A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 20A |
Turn Off Time-Nom (toff) | 400 ns |
IGBT Type | Trench |
Gate Charge | 85nC |
Current - Collector Pulsed (Icm) | 150A |
Td (on/off) @ 25°C | -/160ns |
Switching Energy | 620μJ (off) |
Gate-Emitter Voltage-Max | 30V |
Gate-Emitter Thr Voltage-Max | 6V |
Fall Time-Max (tf) | 105ns |
RoHS Status | RoHS Compliant |