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IRG7PH37K10D-EPBF

IRG7PH37K10D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG7PH37K10D-EPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 861
  • Description: IRG7PH37K10D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 216W
Rise Time-Max 45ns
Element Configuration Single
Input Type Standard
Power - Max 216W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 45A
Reverse Recovery Time 120 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 15A
Gate Charge 135nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 50ns/240ns
Switching Energy 1mJ (on), 600μJ (off)
Gate-Emitter Thr Voltage-Max 7.5V
Fall Time-Max (tf) 100ns
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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