IRG7PH37K10D-EPBF
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 216W |
| Rise Time-Max | 45ns |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 216W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.4V |
| Max Collector Current | 45A |
| Reverse Recovery Time | 120 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Test Condition | 600V, 15A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 15A |
| Gate Charge | 135nC |
| Current - Collector Pulsed (Icm) | 60A |
| Td (on/off) @ 25°C | 50ns/240ns |
| Switching Energy | 1mJ (on), 600μJ (off) |
| Gate-Emitter Thr Voltage-Max | 7.5V |
| Fall Time-Max (tf) | 100ns |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
