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IRG7PH42UD2PBF

IRG7PH42UD2PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG7PH42UD2PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 795
  • Description: IRG7PH42UD2PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 321W
Peak Reflow Temperature (Cel) 250
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRG7PH42
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 321W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.02V
Max Collector Current 60A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.02V @ 15V, 30A
Turn Off Time-Nom (toff) 470 ns
IGBT Type Trench
Gate Charge 234nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C -/233ns
Switching Energy 1.32mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 85ns
RoHS Status RoHS Compliant
See Relate Datesheet

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