Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2011 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 469W |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Rise Time-Max | 55ns |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 469W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2V |
Max Collector Current | 130A |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 1.7V |
Turn On Time | 80 ns |
Test Condition | 600V, 40A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
Turn Off Time-Nom (toff) | 700 ns |
IGBT Type | Trench |
Gate Charge | 220nC |
Current - Collector Pulsed (Icm) | 160A |
Td (on/off) @ 25°C | 45ns/410ns |
Switching Energy | 2.56mJ (on), 1.78mJ (off) |
Gate-Emitter Thr Voltage-Max | 6V |
Fall Time-Max (tf) | 65ns |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |