IRG7PH50K10D-EPBF
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 400W |
| Rise Time-Max | 80ns |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 400W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.4V |
| Max Collector Current | 90A |
| Reverse Recovery Time | 130 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Test Condition | 600V, 35A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 35A |
| Gate Charge | 300nC |
| Current - Collector Pulsed (Icm) | 160A |
| Td (on/off) @ 25°C | 90ns/340ns |
| Switching Energy | 2.3mJ (on), 1.6mJ (off) |
| Gate-Emitter Thr Voltage-Max | 7.5V |
| Fall Time-Max (tf) | 110ns |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
