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IRG7PH50U-EP

IRG7PH50U-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRG7PH50U-EP
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 252
  • Description: IRG7PH50U-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 556W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Rise Time-Max 60ns
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 556W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 140A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 75 ns
Test Condition 600V, 50A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Turn Off Time-Nom (toff) 710 ns
IGBT Type Trench
Gate Charge 440nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 35ns/430ns
Switching Energy 4.6mJ (on), 3.2mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 65ns
RoHS Status RoHS Compliant
See Relate Datesheet

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