Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2010 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | Not Applicable |
Number of Terminations | 3 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 556W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Rise Time-Max | 60ns |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 556W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2V |
Max Collector Current | 140A |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Turn On Time | 75 ns |
Test Condition | 600V, 50A, 5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
Turn Off Time-Nom (toff) | 710 ns |
IGBT Type | Trench |
Gate Charge | 440nC |
Current - Collector Pulsed (Icm) | 150A |
Td (on/off) @ 25°C | 35ns/430ns |
Switching Energy | 4.6mJ (on), 3.2mJ (off) |
Gate-Emitter Thr Voltage-Max | 6V |
Fall Time-Max (tf) | 65ns |
RoHS Status | RoHS Compliant |