Parameters | |
---|---|
Switching Energy | 4.8mJ (on), 2.8mJ (off) |
Gate-Emitter Voltage-Max | 30V |
Gate-Emitter Thr Voltage-Max | 7.5V |
Fall Time-Max (tf) | 90ns |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 247 |
Weight | 38.000013g |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tube |
Published | 2013 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 520W |
Rise Time-Max | 105ns |
Element Configuration | Single |
Input Type | Standard |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.4V |
Max Collector Current | 65A |
Reverse Recovery Time | 170 ns |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 120A |
Collector Emitter Saturation Voltage | 2.4V |
Test Condition | 600V, 50A, 5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
Gate Charge | 435nC |
Current - Collector Pulsed (Icm) | 200A |
Td (on/off) @ 25°C | 110ns/490ns |