IRG7PSH73K10PBF
| Parameters | |
|---|---|
| Element Configuration | Single |
| Power Dissipation | 1.15kW |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 63 ns |
| Power - Max | 1150W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 267 ns |
| Collector Emitter Voltage (VCEO) | 2.3V |
| Max Collector Current | 220A |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2V |
| Turn On Time | 172 ns |
| Test Condition | 600V, 75A, 4.7 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 75A |
| Turn Off Time-Nom (toff) | 567 ns |
| IGBT Type | Trench |
| Gate Charge | 360nC |
| Current - Collector Pulsed (Icm) | 225A |
| Td (on/off) @ 25°C | 63ns/267ns |
| Switching Energy | 7.7mJ (on), 4.6mJ (off) |
| Gate-Emitter Thr Voltage-Max | 7.5V |
| Height | 20.8mm |
| Length | 16.0782mm |
| Width | 5.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-274AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 1.15kW |
| Number of Elements | 1 |
See Relate Datesheet
