IRG8CH42K10F
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Bulk |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Subcategory | Insulated Gate BIP Transistors |
| Input Type | Standard |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2V |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Test Condition | 600V, 40A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
| Gate Charge | 230nC |
| Td (on/off) @ 25°C | 40ns/240ns |
| Gate-Emitter Voltage-Max | 30V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
