IRG8CH76K10F
| Parameters | |
|---|---|
| Polarity/Channel Type | N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 75A |
| Turn On Time | 100 ns |
| Test Condition | 600V, 75A, 1.5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 75A |
| Turn Off Time-Nom (toff) | 555 ns |
| Gate Charge | 480nC |
| Td (on/off) @ 25°C | 80ns/210ns |
| Gate-Emitter Voltage-Max | 30V |
| VCEsat-Max | 2 V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Bulk |
| Published | 2015 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Position | UNSPECIFIED |
| Terminal Form | UNSPECIFIED |
| JESD-30 Code | R-XXUC-N |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
See Relate Datesheet
