banner_page

IRGB15B60KDPBF

IRGB15B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRGB15B60KDPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 904
  • Description: IRGB15B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 139W
Current Rating 31A
Number of Elements 1
Element Configuration Single
Power Dissipation 208W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 34 ns
Transistor Application MOTOR CONTROL
Rise Time 16ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 184 ns
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 31A
Reverse Recovery Time 92 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Turn On Time 52 ns
Test Condition 400V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A
Turn Off Time-Nom (toff) 231 ns
IGBT Type NPT
Gate Charge 56nC
Current - Collector Pulsed (Icm) 62A
Td (on/off) @ 25°C 34ns/184ns
Switching Energy 220μJ (on), 340μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Height 15.24mm
Length 10.54mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good