banner_page

IRGB20B60PD1PBF

IRGB20B60PD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRGB20B60PD1PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 165
  • Description: IRGB20B60PD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Max Power Dissipation 215W
Current Rating 40A
Element Configuration Single
Power Dissipation 215W
Input Type Standard
Turn On Delay Time 20 ns
Power - Max 215W
Rise Time 5ns
Turn-Off Delay Time 115 ns
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 40A
Reverse Recovery Time 28 ns
Collector Emitter Breakdown Voltage 600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 40A
Collector Emitter Saturation Voltage 2.05V
Test Condition 390V, 13A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
IGBT Type NPT
Gate Charge 68nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 20ns/115ns
Switching Energy 95μJ (on), 100μJ (off)
Height 8.763mm
Length 10.5156mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good