IRGB4061DPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 6.000006g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 206W |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 206W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 40 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 25ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 105 ns |
| Collector Emitter Voltage (VCEO) | 1.95V |
| Max Collector Current | 36A |
| Reverse Recovery Time | 100 ns |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.65V |
| Turn On Time | 65 ns |
| Test Condition | 400V, 18A, 22 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 18A |
| Turn Off Time-Nom (toff) | 160 ns |
| IGBT Type | Trench |
| Gate Charge | 35nC |
| Current - Collector Pulsed (Icm) | 72A |
| Td (on/off) @ 25°C | 40ns/105ns |
| Switching Energy | 95μJ (on), 350μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Height | 9.02mm |
| Length | 10.66mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
