IRGB4062DPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 6.000006g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 250W |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 250W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 53 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 22ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 115 ns |
| Collector Emitter Voltage (VCEO) | 1.95V |
| Max Collector Current | 48A |
| Reverse Recovery Time | 89 ns |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.65V |
| Turn On Time | 64 ns |
| Test Condition | 400V, 24A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 24A |
| Turn Off Time-Nom (toff) | 164 ns |
| IGBT Type | Trench |
| Gate Charge | 50nC |
| Current - Collector Pulsed (Icm) | 72A |
| Td (on/off) @ 25°C | 41ns/104ns |
| Switching Energy | 115μJ (on), 600μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Fall Time-Max (tf) | 41ns |
| Height | 9.02mm |
| Length | 10.6426mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
