Parameters | |
---|---|
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1996 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | FAST |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Input Type | Standard |
Power - Max | 100W |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
JEDEC-95 Code | TO-220AB |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 31A |
Power Dissipation-Max (Abs) | 100W |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 17A |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.5V |
RoHS Status | Non-RoHS Compliant |