Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2004 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 39W |
Current Rating | 12A |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 39W |
Case Connection | ISOLATED |
Input Type | Standard |
Turn On Delay Time | 23 ns |
Transistor Application | MOTOR CONTROL |
Rise Time | 22ns |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 140 ns |
Collector Emitter Voltage (VCEO) | 2.2V |
Max Collector Current | 12A |
Reverse Recovery Time | 95 ns |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.2V |
Turn On Time | 43 ns |
Test Condition | 400V, 8A, 50 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 8A |
Turn Off Time-Nom (toff) | 220 ns |
IGBT Type | NPT |
Gate Charge | 29nC |
Current - Collector Pulsed (Icm) | 24A |
Td (on/off) @ 25°C | 23ns/140ns |
Switching Energy | 160μJ (on), 160μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.5V |
Fall Time-Max (tf) | 56ns |
Height | 16.12mm |
Length | 10.6172mm |
Width | 4.826mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |