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IRGIB7B60KDPBF

IRGIB7B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRGIB7B60KDPBF
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 204
  • Description: IRGIB7B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 39W
Current Rating 12A
Number of Elements 1
Element Configuration Single
Power Dissipation 39W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 23 ns
Transistor Application MOTOR CONTROL
Rise Time 22ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 140 ns
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 12A
Reverse Recovery Time 95 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Turn On Time 43 ns
Test Condition 400V, 8A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 8A
Turn Off Time-Nom (toff) 220 ns
IGBT Type NPT
Gate Charge 29nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 23ns/140ns
Switching Energy 160μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 56ns
Height 16.12mm
Length 10.6172mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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