Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 38.000013g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2004 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 1.2kV |
Max Power Dissipation | 300W |
Current Rating | 40A |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 300W |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Rise Time | 30ns |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 4.85V |
Max Collector Current | 40A |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 3.05V |
Turn On Time | 70 ns |
Test Condition | 600V, 20A, 5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 4.85V @ 15V, 40A |
Turn Off Time-Nom (toff) | 228 ns |
IGBT Type | NPT |
Gate Charge | 169nC |
Current - Collector Pulsed (Icm) | 120A |
Switching Energy | 850μJ (on), 425μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Contains Lead, Lead Free |