IRGP20B120UD-EP
| Parameters | |
|---|---|
| Max Collector Current | 40A |
| Reverse Recovery Time | 300 ns |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 3.05V |
| Turn On Time | 70 ns |
| Test Condition | 600V, 20A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 4.85V @ 15V, 40A |
| Turn Off Time-Nom (toff) | 228 ns |
| IGBT Type | NPT |
| Gate Charge | 169nC |
| Current - Collector Pulsed (Icm) | 120A |
| Switching Energy | 850μJ (on), 425μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 1999 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 1.2kV |
| Max Power Dissipation | 300W |
| Current Rating | 40A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300W |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Turn On Delay Time | 50 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 20ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 204 ns |
| Collector Emitter Voltage (VCEO) | 4.85V |
See Relate Datesheet
