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IRGP20B60PDPBF

IRGP20B60PDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRGP20B60PDPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 110
  • Description: IRGP20B60PDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 40A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.05V
Turn On Time 25 ns
Test Condition 390V, 13A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
Turn Off Time-Nom (toff) 138 ns
IGBT Type NPT
Gate Charge 68nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 20ns/115ns
Switching Energy 95μJ (on), 100μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 17ns
Height 20.3mm
Length 15.9mm
Width 5.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2003
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature HIGH RELIABILITY, LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 220W
Current Rating 40A
Number of Elements 1
Element Configuration Single
Power Dissipation 220W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 20 ns
Transistor Application POWER CONTROL
Rise Time 5ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 115 ns
See Relate Datesheet

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