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IRGP30B60KD-EP

IRGP30B60KD-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRGP30B60KD-EP
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 582
  • Description: IRGP30B60KD-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 304W
Current Rating 60A
Number of Elements 1
Element Configuration Single
Power Dissipation 304W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 46 ns
Transistor Application MOTOR CONTROL
Rise Time 28ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 185 ns
Collector Emitter Voltage (VCEO) 2.35V
Max Collector Current 60A
Reverse Recovery Time 125 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.35V
Turn On Time 74 ns
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 30A
Turn Off Time-Nom (toff) 237 ns
IGBT Type NPT
Gate Charge 102nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 46ns/185ns
Switching Energy 350μJ (on), 825μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 42ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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