IRGP35B60PDPBF
| Parameters | |
|---|---|
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 26ns/110ns |
| Switching Energy | 220μJ (on), 215μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Height | 20.7mm |
| Length | 15.87mm |
| Width | 5.3086mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2000 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Additional Feature | HIGH RELIABILITY, LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 308W |
| Current Rating | 60A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 308W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 26 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 6ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 110 ns |
| Collector Emitter Voltage (VCEO) | 2.55V |
| Max Collector Current | 60A |
| Reverse Recovery Time | 42 ns |
| JEDEC-95 Code | TO-247AC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.85V |
| Turn On Time | 34 ns |
| Test Condition | 390V, 22A, 3.3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.55V @ 15V, 35A |
| Turn Off Time-Nom (toff) | 142 ns |
| IGBT Type | NPT |
| Gate Charge | 160nC |
See Relate Datesheet
