banner_page

IRGP4062DPBF

IRGP4062DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRGP4062DPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 380
  • Description: IRGP4062DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Number of Elements 1
Element Configuration Single
Power Dissipation 250W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 41 ns
Transistor Application POWER CONTROL
Rise Time 22ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 104 ns
Collector Emitter Voltage (VCEO) 1.95V
Max Collector Current 48A
Reverse Recovery Time 89 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.65V
Turn On Time 64 ns
Test Condition 400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 24A
Turn Off Time-Nom (toff) 164 ns
IGBT Type Trench
Gate Charge 50nC
Current - Collector Pulsed (Icm) 72A
Td (on/off) @ 25°C 41ns/104ns
Switching Energy 115μJ (on), 600μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 20.3mm
Length 15.875mm
Width 5.3mm
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good