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IRGP4063-EPBF

IRGP4063-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRGP4063-EPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 284
  • Description: IRGP4063-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Current - Collector Pulsed (Icm) 144A
Td (on/off) @ 25°C 60ns/145ns
Switching Energy 625μJ (on), 1.28mJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 46ns
Height 20.7mm
Length 15.87mm
Width 5.13mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 330W
Number of Elements 1
Rise Time-Max 56ns
Element Configuration Single
Power Dissipation 330W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.14V
Max Collector Current 96A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.65V
Turn On Time 100 ns
Test Condition 400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.14V @ 15V, 48A
Turn Off Time-Nom (toff) 210 ns
IGBT Type Trench
Gate Charge 95nC
See Relate Datesheet

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