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IRGP4063PBF

IRGP4063PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRGP4063PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 274
  • Description: IRGP4063PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Collector Emitter Voltage (VCEO) 2.14V
Max Collector Current 96A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 30V
Collector Emitter Saturation Voltage 1.65V
Turn On Time 100 ns
Test Condition 400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.14V @ 15V, 48A
Turn Off Time-Nom (toff) 210 ns
IGBT Type Trench
Gate Charge 95nC
Current - Collector Pulsed (Icm) 144A
Td (on/off) @ 25°C 60ns/145ns
Switching Energy 625μJ (on), 1.28mJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 46ns
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 330W
Number of Elements 1
Rise Time-Max 56ns
Element Configuration Single
Power Dissipation 330W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 55 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 165 ns
See Relate Datesheet

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