Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2011 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 268W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Rise Time-Max | 42ns |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 268W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.85V |
Max Collector Current | 76A |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 1.6V |
Turn On Time | 78 ns |
Test Condition | 400V, 35A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 35A |
Turn Off Time-Nom (toff) | 188 ns |
IGBT Type | Trench |
Gate Charge | 104nC |
Current - Collector Pulsed (Icm) | 105A |
Td (on/off) @ 25°C | 46ns/105ns |
Switching Energy | 390μJ (on), 632μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Fall Time-Max (tf) | 54ns |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |