Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2004 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 268W |
Number of Elements | 1 |
Rise Time-Max | 42ns |
Element Configuration | Single |
Power Dissipation | 268W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 43 ns |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 127 ns |
Collector Emitter Voltage (VCEO) | 1.85V |
Max Collector Current | 76A |
JEDEC-95 Code | TO-247AC |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 1.6V |
Turn On Time | 78 ns |
Test Condition | 400V, 35A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 35A |
Turn Off Time-Nom (toff) | 188 ns |
IGBT Type | Trench |
Gate Charge | 104nC |
Current - Collector Pulsed (Icm) | 105A |
Td (on/off) @ 25°C | 46ns/105ns |
Switching Energy | 390μJ (on), 632μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Fall Time-Max (tf) | 54ns |
Height | 20.7mm |
Length | 15.87mm |
Width | 5.3086mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |