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IRGP4072DPBF

IRGP4072DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRGP4072DPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 472
  • Description: IRGP4072DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 124ns
Height 20.701mm
Length 15.875mm
Width 5.3086mm
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 180W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Rise Time-Max 50ns
Element Configuration Single
Power Dissipation 180W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 70A
Reverse Recovery Time 122 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 55 ns
Test Condition 240V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 40A
Turn Off Time-Nom (toff) 309 ns
IGBT Type Trench
Gate Charge 73nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 18ns/144ns
Switching Energy 409μJ (on), 838μJ (off)
See Relate Datesheet

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