Parameters | |
---|---|
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
Fall Time-Max (tf) | 124ns |
Height | 20.701mm |
Length | 15.875mm |
Width | 5.3086mm |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2007 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 180W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Rise Time-Max | 50ns |
Element Configuration | Single |
Power Dissipation | 180W |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.7V |
Max Collector Current | 70A |
Reverse Recovery Time | 122 ns |
JEDEC-95 Code | TO-247AC |
Collector Emitter Breakdown Voltage | 300V |
Collector Emitter Saturation Voltage | 1.7V |
Turn On Time | 55 ns |
Test Condition | 240V, 40A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 40A |
Turn Off Time-Nom (toff) | 309 ns |
IGBT Type | Trench |
Gate Charge | 73nC |
Current - Collector Pulsed (Icm) | 120A |
Td (on/off) @ 25°C | 18ns/144ns |
Switching Energy | 409μJ (on), 838μJ (off) |