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IRGP4262D-EPBF

IRGP4262D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRGP4262D-EPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 741
  • Description: IRGP4262D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 60A
Reverse Recovery Time 170 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.7V
Test Condition 400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 24A
Gate Charge 70nC
Current - Collector Pulsed (Icm) 96A
Td (on/off) @ 25°C 24ns/73ns
Switching Energy 520μJ (on), 240μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.7V
Fall Time-Max (tf) 40ns
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Rise Time-Max 45ns
Element Configuration Single
Input Type Standard
Power - Max 250W
See Relate Datesheet

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