Parameters | |
---|---|
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.1V |
Max Collector Current | 60A |
Reverse Recovery Time | 170 ns |
Collector Emitter Breakdown Voltage | 650V |
Collector Emitter Saturation Voltage | 1.7V |
Test Condition | 400V, 24A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 24A |
Gate Charge | 70nC |
Current - Collector Pulsed (Icm) | 96A |
Td (on/off) @ 25°C | 24ns/73ns |
Switching Energy | 520μJ (on), 240μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 7.7V |
Fall Time-Max (tf) | 40ns |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Operating Temperature | -40°C~175°C TJ |
Packaging | Tube |
Published | 2013 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 250W |
Rise Time-Max | 45ns |
Element Configuration | Single |
Input Type | Standard |
Power - Max | 250W |