IRGP4266DPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tube |
| Published | 2007 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 455W |
| Rise Time-Max | 90ns |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 455W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.1V |
| Max Collector Current | 140A |
| Reverse Recovery Time | 170 ns |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.7V |
| Test Condition | 400V, 75A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| Gate Charge | 210nC |
| Current - Collector Pulsed (Icm) | 300A |
| Td (on/off) @ 25°C | 50ns/200ns |
| Switching Energy | 2.5mJ (on), 2.2mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 7.7V |
| Fall Time-Max (tf) | 80ns |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
