IRGP4650D-EPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 268W |
| Rise Time-Max | 42ns |
| Element Configuration | Single |
| Power Dissipation | 134W |
| Input Type | Standard |
| Power - Max | 268W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.9V |
| Max Collector Current | 76A |
| Reverse Recovery Time | 120 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.9V |
| Test Condition | 400V, 35A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 35A |
| Gate Charge | 104nC |
| Current - Collector Pulsed (Icm) | 105A |
| Td (on/off) @ 25°C | 46ns/105ns |
| Switching Energy | 390μJ (on), 632μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Fall Time-Max (tf) | 54ns |
| Height | 20.7mm |
| Length | 15.87mm |
| Width | 5.31mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
