Parameters | |
---|---|
Power - Max | 330W |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.9V |
Max Collector Current | 100A |
Reverse Recovery Time | 115 ns |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 1.6V |
Test Condition | 400V, 48A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 48A |
Gate Charge | 140nC |
Current - Collector Pulsed (Icm) | 144A |
Td (on/off) @ 25°C | 60ns/145ns |
Switching Energy | 625μJ (on), 1.28mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Fall Time-Max (tf) | 46ns |
Height | 20.7mm |
Length | 15.87mm |
Width | 5.31mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2007 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 330W |
Rise Time-Max | 56ns |
Element Configuration | Single |
Power Dissipation | 134W |
Input Type | Standard |