Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-3P-3 Full Pack |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2008 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | HIGH RELIABILITY |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Rise Time-Max | 20ns |
Configuration | SINGLE WITH BUILT-IN DIODE |
Input Type | Standard |
Power - Max | 390W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Reverse Recovery Time | 42ns |
JEDEC-95 Code | TO-247AD |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 75A |
Power Dissipation-Max (Abs) | 390W |
Turn On Time | 39 ns |
Test Condition | 390V, 33A, 3.3 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.85V @ 15V, 50A |
Turn Off Time-Nom (toff) | 161 ns |
IGBT Type | NPT |
Gate Charge | 205nC |
Current - Collector Pulsed (Icm) | 150A |
Td (on/off) @ 25°C | 30ns/130ns |
Switching Energy | 255μJ (on), 375μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
Fall Time-Max (tf) | 20ns |
RoHS Status | RoHS Compliant |