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IRGPS4067DPBF

IRGPS4067DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRGPS4067DPBF
  • Package: TO-274AA
  • Datasheet: PDF
  • Stock: 191
  • Description: IRGPS4067DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 80 ns
Test Condition 400V, 120A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 120A
Turn Off Time-Nom (toff) 230 ns
IGBT Type Trench
Gate Charge 240nC
Current - Collector Pulsed (Icm) 360A
Td (on/off) @ 25°C 80ns/190ns
Switching Energy 5.75mJ (on), 3.43mJ (off)
Height 20.8mm
Length 16.1mm
Width 5.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-274AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 750W
Number of Elements 1
Element Configuration Single
Power Dissipation 750W
Case Connection COLLECTOR
Input Type Standard
Transistor Application GENERAL PURPOSE SWITCHING
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.05V
Max Collector Current 240A
Reverse Recovery Time 130 ns
See Relate Datesheet

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