IRGR2B60KDPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 35W |
| Base Part Number | IRGR2B60 |
| Rise Time-Max | 25ns |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 35W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.25V |
| Max Collector Current | 6.3A |
| Reverse Recovery Time | 68 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.95V |
| Test Condition | 400V, 2A, 100 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.25V @ 15V, 2A |
| IGBT Type | NPT |
| Gate Charge | 12nC |
| Current - Collector Pulsed (Icm) | 8A |
| Td (on/off) @ 25°C | 11ns/150ns |
| Switching Energy | 74μJ (on), 39μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Fall Time-Max (tf) | 75ns |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
