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IRGR4045DPBF

IRGR4045DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRGR4045DPBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 381
  • Description: IRGR4045DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Length 6.73mm
Width 2.39mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 77W
Terminal Form GULL WING
Base Part Number IRGR4045
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 15ns
Element Configuration Single
Power Dissipation 39W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 27 ns
Power - Max 77W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 17 ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 12A
Reverse Recovery Time 74 ns
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 38 ns
Test Condition 400V, 6A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
Turn Off Time-Nom (toff) 127 ns
IGBT Type Trench
Gate Charge 19.5nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 27ns/75ns
Switching Energy 56μJ (on), 122μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 22ns
Height 6.22mm
See Relate Datesheet

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