Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2000 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | MATTE TIN OVER NICKEL |
Additional Feature | LOW SATURATION VOLTAGE |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 125W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | IRGS14C40LPBF |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Rise Time-Max | 4000ns |
Element Configuration | Single |
Input Type | Logic |
Turn On Delay Time | 1.35 μs |
Power - Max | 125W |
Transistor Application | AUTOMOTIVE IGNITION |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 8.3 μs |
Collector Emitter Voltage (VCEO) | 1.75V |
Max Collector Current | 20A |
Collector Emitter Breakdown Voltage | 430V |
Collector Emitter Saturation Voltage | 1.55V |
Max Breakdown Voltage | 430V |
Turn On Time | 3700 ns |
Vce(on) (Max) @ Vge, Ic | 1.75V @ 5V, 14A |
Gate Charge | 27nC |
Td (on/off) @ 25°C | 900ns/6μs |
Gate-Emitter Voltage-Max | 12V |
Gate-Emitter Thr Voltage-Max | 2.2V |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |