Parameters | |
---|---|
Published | 2009 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | compliant |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Operating Temperature (Max) | 175°C |
Number of Elements | 1 |
Rise Time-Max | 31ns |
Configuration | SINGLE WITH BUILT-IN DIODE |
Case Connection | COLLECTOR |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 250W |
Turn On Time | 64 ns |
Collector Current-Max (IC) | 48A |
Turn Off Time-Nom (toff) | 164 ns |
Collector-Emitter Voltage-Max | 600V |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Fall Time-Max (tf) | 41ns |
RoHS Status | RoHS Compliant |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Surface Mount | YES |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |