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IRGS8B60KTRLPBF

IRGS8B60KTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRGS8B60KTRLPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 409
  • Description: IRGS8B60KTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 260.39037mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 167W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRGS8B60KPBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 26ns
Element Configuration Single
Power Dissipation 167W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 28A
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Turn On Time 43 ns
Test Condition 400V, 8A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 8A
Turn Off Time-Nom (toff) 220 ns
IGBT Type NPT
Gate Charge 29nC
Current - Collector Pulsed (Icm) 34A
Td (on/off) @ 25°C 23ns/140ns
Switching Energy 160μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 56ns
Height 4.699mm
Length 10.668mm
Width 9.652mm
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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