IRGSL14C40LPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tube |
| Published | 2004 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | LOW SATURATION VOLTAGE |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 430V |
| Max Power Dissipation | 125W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 20A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 125W |
| Input Type | Logic |
| Transistor Application | AUTOMOTIVE IGNITION |
| Rise Time | 2.8μs |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.75V |
| Max Collector Current | 20A |
| Collector Emitter Breakdown Voltage | 430V |
| Collector Emitter Saturation Voltage | 1.4V |
| Turn On Time | 3700 ns |
| Vce(on) (Max) @ Vge, Ic | 1.75V @ 5V, 14A |
| Gate Charge | 27nC |
| Td (on/off) @ 25°C | 900ns/6μs |
| Gate-Emitter Voltage-Max | 12V |
| Gate-Emitter Thr Voltage-Max | 2.2V |
| Height | 9.652mm |
| Length | 10.668mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
